NPN silicon bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a maximum power dissipation of 250mW and a transition frequency of 250MHz. Packaged in a SOT-323-3 surface mount case, this component is RoHS compliant and halogen-free.
Frequency250MHz
PackageSOT-323-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BC850CWH6327XTSA1 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC850CWH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BC850CWH6327XTSA1 to view detailed technical specifications.
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