The Infineon BC857C is a PNP bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It has a maximum operating frequency of 250MHz and a maximum power dissipation of 330mW. The transistor is packaged in a small outline R-PDSO-G3 package and is available on tape and reel. It has a height of 0.9mm, length of 2.9mm, and width of 1.3mm. The transistor is suitable for use in high-frequency applications and can operate at a maximum temperature of 150°C.
Frequency250MHz
PackageSOT
PolarityPNP
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Technical Specifications
Infineon BC857C technical specifications.
General
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 330mW |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC857C Datasheet
Download the complete datasheet for Infineon BC857C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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