PNP silicon bipolar junction transistor, surface mount, in a 6-lead SOT-363 package. Features a maximum continuous collector current of 100mA, a collector-emitter breakdown voltage of 45V, and a transition frequency of 250MHz. Operates with a collector-emitter saturation voltage of 650mV and an emitter-base voltage of 5V. This 2-element transistor offers a minimum DC current gain (hFE) of 200 and is RoHS compliant and halogen-free.
Frequency250MHz
PackageSOT-363-6
Voltage65V
Current1A
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Technical Specifications
Infineon BC857SH6327XTSA1 technical specifications.
General
Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
650mV
Collector Emitter Voltage (VCEO)
650mV
Collector-emitter Voltage-Max
650mV
Continuous Collector Current
100mA
Current
1A
Emitter Base Voltage (VEBO)
5V
Frequency
250MHz
Halogen Free
Halogen Free
Height
800um
hFE Min
200
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
250mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
Voltage
65V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BC857SH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BC857SH6327XTSA1 to view detailed technical specifications.
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