PNP silicon bipolar junction transistor, surface mount, in a 6-lead SOT-363 package. Features a maximum continuous collector current of 100mA, a collector-emitter breakdown voltage of 45V, and a transition frequency of 250MHz. Operates with a collector-emitter saturation voltage of 650mV and an emitter-base voltage of 5V. This 2-element transistor offers a minimum DC current gain (hFE) of 200 and is RoHS compliant and halogen-free.
Frequency250MHz
PackageSOT-363-6
Voltage65V
Current1A
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Technical Specifications
Infineon BC857SH6327XTSA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 650mV |
| Collector Emitter Voltage (VCEO) | 650mV |
| Collector-emitter Voltage-Max | 650mV |
| Continuous Collector Current | 100mA |
| Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Voltage | 65V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC857SH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BC857SH6327XTSA1 to view detailed technical specifications.
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