PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and 50V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 250MHz. Packaged in a compact SOT-323-3 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 250mW.
Frequency250MHz
PackageSOT-323-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Infineon BC860CWH6327 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Height | 0.8mm |
| Length | 2mm |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC860CWH6327 Datasheet
Download the complete datasheet for Infineon BC860CWH6327 to view detailed technical specifications.
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