PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 65V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a 250MHz transition frequency and a 650mV collector-emitter saturation voltage. Packaged in a RoHS compliant, halogen-free SOT-363 surface mount package.
Frequency250MHz
PackageSOT-363
MountingSurface Mount
PolarityPNP
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Technical Specifications
Infineon BCM856SH6327XTSA1 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
650mV
Collector Emitter Voltage (VCEO)
5V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Continuous Collector Current
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
250MHz
Halogen Free
Halogen Free
Height
800um
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
250mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCM856SH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BCM856SH6327XTSA1 to view detailed technical specifications.
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