The BCP 56-10 E6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 2W. The transistor is packaged in a SOT-223-4 lead-free package and is RoHS compliant. It operates over a temperature range of -65°C to 150°C.
PackageSOT-223-4
Current Rating1A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCP 56-10 E6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | BCP56 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCP 56-10 E6327 Datasheet
Download the complete datasheet for Infineon BCP 56-10 E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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