The BCP55-16H6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 1A. It has a maximum power dissipation of 2W and a transition frequency of 100MHz. The transistor is packaged in a TO-261-4 package and is available in quantities of 1000 on tape and reel.
PackageTO-261-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCP55-16H6327 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Max Collector Current | 1A |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCP55-16H6327 Datasheet
Download the complete datasheet for Infineon BCP55-16H6327 to view detailed technical specifications.
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