NPN silicon bipolar junction transistor for surface mount applications. Features a 1A maximum collector current and 60V collector-emitter breakdown voltage. Operates with a 100MHz transition frequency and a maximum power dissipation of 2W. Packaged in a SOT-223-4 case, this lead-free and RoHS-compliant component is supplied on tape and reel.
Frequency100MHz
PackageSOT-223-4
Current Rating1A
MountingSurface Mount
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Technical Specifications
Infineon BCP55E6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BCP55 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCP55E6327 Datasheet
Download the complete datasheet for Infineon BCP55E6327 to view detailed technical specifications.
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