NPN silicon bipolar junction transistor for surface mount applications. Features a 1A maximum collector current and 60V collector-emitter breakdown voltage. Operates with a 100MHz transition frequency and a maximum power dissipation of 2W. Packaged in a SOT-223-4 case, this lead-free and RoHS-compliant component is supplied on tape and reel.
Frequency100MHz
PackageSOT-223-4
Current Rating1A
MountingSurface Mount
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Technical Specifications
Infineon BCP55E6327 technical specifications.
General
Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Lead Free
Lead Free
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
RoHS Compliant
Yes
Series
BCP55
Transition Frequency
100MHz
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
Infineon BCP55E6327 Datasheet
Download the complete datasheet for Infineon BCP55E6327 to view detailed technical specifications.
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