Dual NPN/PNP bipolar junction transistor in a SOT-363-6 surface mount package. Features a 50V collector-emitter breakdown voltage, 100mA max collector current, and 300mV collector-emitter saturation voltage. Operates across a temperature range of -65°C to 150°C with a 250mW power dissipation. Includes a minimum hFE of 70 and a transition frequency of 170MHz.
PackageSOT-363-6
MountingSurface Mount
Power250mW
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Technical Specifications
Infineon BCR08PNH6433XTMA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.8mm |
| hFE Min | 70 |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Power Dissipation | 250mW |
| RoHS Compliant | No |
| Transition Frequency | 170MHz |
| Width | 1.25mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BCR08PNH6433XTMA1 Datasheet
Download the complete datasheet for Infineon BCR08PNH6433XTMA1 to view detailed technical specifications.
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