
Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 6-pin SOT-363 package. Offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. Key specifications include a collector-emitter saturation voltage of 300mV, a minimum hFE of 30, and a transition frequency of 130MHz. This component is halogen-free, lead-free, and RoHS compliant, with a maximum power dissipation of 250mW and an operating temperature range of -65°C to 150°C.
Infineon BCR10PNH6327XTSA1 technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 30 |
| Input Resistance | 10kR |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCR10PNH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.