Dual NPN/PNP silicon bipolar junction transistor in SOT-363 package. Features 50V collector-emitter breakdown voltage, 100mA max collector current, and 300mV collector-emitter saturation voltage. Operates up to 150°C with 250mW power dissipation and a transition frequency of 130MHz. Surface mountable with tape and reel packaging.
PackageSOT-363
MountingSurface Mount
PolarityNPN, PNP
Power250mW
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Technical Specifications
Infineon BCR10PNH6727XTSA1 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300uV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.8mm |
| hFE Min | 30 |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR10PNH6727XTSA1 Datasheet
Download the complete datasheet for Infineon BCR10PNH6727XTSA1 to view detailed technical specifications.
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