NPN digital bipolar junction transistor (BJT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. This single-configuration transistor offers 200mW maximum power dissipation and a typical input resistor of 4.7 kOhm. Housed in a 3-pin SOT-23 (TO-236AA) plastic package with gull-wing leads, it operates from -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BCR116E6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AA
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
100mA
Maximum Power Dissipation
200mW
Typical Input Resistor
4.7kOhm
Typical Resistor Ratio
0.1
Maximum Collector-Emitter Saturation Voltage
[email protected]@10mAV
Minimum DC Current Gain
70@5mA@5V
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BCR116E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCR116E6327HTSA1 to view detailed technical specifications.
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