
NPN bipolar junction transistor, surface mount, SOT-363 package. Features 50V collector-emitter breakdown voltage, 100mA max collector current, and 250mW power dissipation. Operates with a transition frequency of 130MHz and a minimum hFE of 30. RoHS and Halogen Free compliant, with a wide operating temperature range from -65°C to 150°C.
Infineon BCR133SH6327XTSA1 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 30 |
| Input Resistance | 10kR |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCR133SH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
