NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates with a collector-emitter saturation voltage of 300mV and a transition frequency of 130MHz. Housed in a compact SOT-323-3 surface mount package, this silicon transistor is RoHS and halogen-free compliant, with tin contact plating.
PackageSOT-323-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCR141WH6327XTSA1 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR141WH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BCR141WH6327XTSA1 to view detailed technical specifications.
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