The BCR183SE6327 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a SOT-363-6 surface mount package and is lead-free. It has a minimum current gain of 30 and a transition frequency of 200MHz.
PackageSOT-363-6
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Infineon BCR183SE6327 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -100mA |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR183SE6327 Datasheet
Download the complete datasheet for Infineon BCR183SE6327 to view detailed technical specifications.
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