
PNP bipolar junction transistor in a SOT-363-6 surface mount package. Features a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a minimum hFE of 70 and a transition frequency of 200MHz. Maximum power dissipation is 250mW. This component is halogen-free, lead-free, and RoHS compliant.
Infineon BCR185SH6327XTSA1 technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 6V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 50V |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 70 |
| Input Resistance | 10kR |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCR185SH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
