The BCR198FE6327 is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a surface mount SOT-723 package and is lead free. The transistor has a maximum power dissipation of 250mW and a transition frequency of 190MHz. It is suitable for use in a variety of applications, including general-purpose switching and amplification. The device is rated for operation over a temperature range of -50V DC rated voltage.
PackageSOT-723
Current Rating-70mA
MountingSurface Mount
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Technical Specifications
Infineon BCR198FE6327 technical specifications.
General
| Package/Case | SOT-723 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -70mA |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Transition Frequency | 190MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR198FE6327 Datasheet
Download the complete datasheet for Infineon BCR198FE6327 to view detailed technical specifications.
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