Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity, designed for small signal applications. Offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. This silicon transistor operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 250mW. The SOT-363-6 package provides a compact footprint with a transition frequency of 150MHz.
PackageSOT-363-6
MountingSurface Mount
PolarityNPN, PNP
Power250mW
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Technical Specifications
Infineon BCR35PNH6327XTSA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 6V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 70 |
| Input Resistance | 10kR |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR35PNH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BCR35PNH6327XTSA1 to view detailed technical specifications.
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