PNP Digital Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 500mA maximum continuous DC collector current. Offers 330mW maximum power dissipation with a typical input resistor of 2.2 kOhm. Housed in a 3-pin SOT-23 (TO-236AA) plastic package with gull-wing leads, measuring 2.9mm x 1.3mm x 1mm. Operates across a wide temperature range from -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BCR555E6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AA
Type
PNP
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
500mA
Maximum Power Dissipation
330mW
Typical Input Resistor
2.2kOhm
Typical Resistor Ratio
0.22
Maximum Collector-Emitter Saturation Voltage
[email protected]@50mAV
Minimum DC Current Gain
70@50mA@5V
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BCR555E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCR555E6327HTSA1 to view detailed technical specifications.
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