PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 500mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 4000 and a transition frequency of 200MHz. Packaged in a TO-261-4 surface mount configuration, this lead-free and RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 1W.
Frequency200MHz
PackageTO-261-4
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Infineon BCV28E6327 technical specifications.
General
Package/Case
TO-261-4
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector-emitter Voltage-Max
1V
Continuous Collector Current
500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
10V
Gain Bandwidth Product
200MHz
hFE Min
4000
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
100nA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Infineon BCV28E6327 Datasheet
Download the complete datasheet for Infineon BCV28E6327 to view detailed technical specifications.
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