PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 500mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 4000 and a transition frequency of 200MHz. Packaged in a TO-261-4 surface mount configuration, this lead-free and RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 1W.
Frequency200MHz
PackageTO-261-4
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Infineon BCV28E6327 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 4000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100nA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCV28E6327 Datasheet
Download the complete datasheet for Infineon BCV28E6327 to view detailed technical specifications.
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