NPN silicon bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a 60V collector-emitter voltage and 10V emitter-base voltage. Housed in a compact SOT-23 surface-mount package with tin-matte plating. Offers a transition frequency of 170MHz and a maximum power dissipation of 360mW. Suitable for a wide temperature range from -65°C to 150°C.
PackageSOT-23
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCV47E6433HTMA1 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| DC Rated Voltage | 60V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCV47E6433HTMA1 Datasheet
Download the complete datasheet for Infineon BCV47E6433HTMA1 to view detailed technical specifications.
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