NPN silicon bipolar junction transistor for small signal applications. Features a 30V collector-emitter voltage (VCEO) and 30V collector-base voltage (VCBO), with a maximum collector current of 100mA. Operates with a maximum frequency of 250MHz and a power dissipation of 300mW. Packaged in a TO-253-4 surface mount case with tin, matte contact plating, and supplied on tape and reel. RoHS compliant.
Frequency250MHz
PackageTO-253-4
Voltage Rating30V
Current Rating100mA
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Technical Specifications
Infineon BCV61CE6327HTSA1 technical specifications.
General
| Package/Case | TO-253-4 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Height | 1mm |
| Length | 2.9mm |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Voltage Rating | 30V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCV61CE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCV61CE6327HTSA1 to view detailed technical specifications.
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