NPN silicon bipolar junction transistor for small signal applications. Features a 30V collector-emitter voltage (VCEO) and 30V collector-base voltage (VCBO), with a maximum collector current of 100mA. Operates with a maximum frequency of 250MHz and a power dissipation of 300mW. Packaged in a TO-253-4 surface mount case with tin, matte contact plating, and supplied on tape and reel. RoHS compliant.
Frequency250MHz
PackageTO-253-4
Voltage Rating30V
Current Rating100mA
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Technical Specifications
Infineon BCV61CE6327HTSA1 technical specifications.
General
Package/Case
TO-253-4
Collector Base Voltage (VCBO)
30V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
30V
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Height
1mm
Length
2.9mm
Max Collector Current
100mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Voltage Rating
30V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCV61CE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCV61CE6327HTSA1 to view detailed technical specifications.
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