NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 330mW. Packaged in a SOT-23-3 surface mount case with tin, matte contact plating. This RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency250MHz
PackageSOT-23-3
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Infineon BCW60CE6327HTSA1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 550mV |
| Collector Emitter Voltage (VCEO) | 550mV |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Halogen Free | Not Halogen Free |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 32V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCW60CE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCW60CE6327HTSA1 to view detailed technical specifications.
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