NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 330mW. Packaged in a SOT-23-3 surface mount case with tin, matte contact plating. This RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency250MHz
PackageSOT-23-3
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Infineon BCW60CE6327HTSA1 technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
32V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
550mV
Collector Emitter Voltage (VCEO)
550mV
Collector-emitter Voltage-Max
550mV
Contact Plating
Tin, Matte
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Halogen Free
Not Halogen Free
Height
0.9mm
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
32V
Max Collector Current
100mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
330mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
32V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCW60CE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCW60CE6327HTSA1 to view detailed technical specifications.
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