PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 45V and a maximum DC collector current of 0.1A. This single-element transistor is housed in a 3-pin TO-92 plastic package with through-hole mounting. Key specifications include a maximum power dissipation of 500mW and a transition frequency of 250MHz (typical). Operating temperature range is -65°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Infineon BCX 79-IX technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.2
Package Width (mm)
4.2
Package Height (mm)
5.2
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
45V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
45V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
500mW
Material
Si
Minimum DC Current Gain
40@10uA@5V|250@2mA@5V|60@100mA@1V
Maximum Transition Frequency
250(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Infineon BCX 79-IX Datasheet
Download the complete datasheet for Infineon BCX 79-IX to view detailed technical specifications.
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