NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 125V Collector Emitter Breakdown Voltage (VCEO) and 125V Collector Base Voltage (VCBO). Offers a maximum collector current of 800mA and a transition frequency of 100MHz. Packaged in a SOT-23 surface mount case, this component operates within a temperature range of -65°C to 150°C. Power dissipation is rated at 330mW.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCX41E6433HTMA1 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 125V |
| Collector Emitter Breakdown Voltage | 125V |
| Collector Emitter Saturation Voltage | 900mV |
| Collector Emitter Voltage (VCEO) | 125V |
| Collector-emitter Voltage-Max | 900mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| hFE Min | 40 |
| Max Breakdown Voltage | 125V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 330mW |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BCX41E6433HTMA1 Datasheet
Download the complete datasheet for Infineon BCX41E6433HTMA1 to view detailed technical specifications.
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