PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. Offers a gain bandwidth product and transition frequency of 125MHz. Packaged in a SOT-89 surface mount case, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 2W.
Frequency125MHz
PackageSOT-89
Voltage80V
Current1A
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Technical Specifications
Infineon BCX53-16E6327 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 125MHz |
| Height | 1.5mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Frequency | 125MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| Voltage | 80V |
| DC Rated Voltage | -80V |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCX53-16E6327 Datasheet
Download the complete datasheet for Infineon BCX53-16E6327 to view detailed technical specifications.
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