NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter voltage, 1A maximum DC collector current, and 2000mW maximum power dissipation. This single-element transistor is housed in a SOT-89 (TO-243AA) plastic package with 4 pins (3+Tab) and a flat lead shape. Operating temperature range is -65°C to 150°C.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Infineon BCX55E6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-89
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.5
Package Width (mm)
2.5
Package Height (mm)
1.5
Seated Plane Height (mm)
1.5
Pin Pitch (mm)
1.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-243AA
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
1A
Maximum Power Dissipation
2000mW
Material
Si
Minimum DC Current Gain
25@5mA@2V|25@500mA@2V|40@150mA@2V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BCX55E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCX55E6327HTSA1 to view detailed technical specifications.
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