NPN bipolar junction transistor (BJT) for surface mount applications in a TO-261-4 (SOT-89) package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 2W. This lead-free and RoHS compliant component is supplied on tape and reel.
PackageTO-261-4
Voltage80V
Current1A
Current Rating1A
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Technical Specifications
Infineon BCX56-16E6327 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Voltage | 80V |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCX56-16E6327 Datasheet
Download the complete datasheet for Infineon BCX56-16E6327 to view detailed technical specifications.
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