NPN bipolar junction transistor (BJT) for surface mount applications in a TO-261-4 (SOT-89) package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 2W. This lead-free and RoHS compliant component is supplied on tape and reel.
PackageTO-261-4
Voltage80V
Current1A
Current Rating1A
Quick Jump:
Technical Specifications
Infineon BCX56-16E6327 technical specifications.
General
Package/Case
TO-261-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
hFE Min
25
Lead Free
Lead Free
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
RoHS Compliant
Yes
Transition Frequency
100MHz
Voltage
80V
DC Rated Voltage
80V
Compliance
RoHS
Compliant
Datasheet
Infineon BCX56-16E6327 Datasheet
Download the complete datasheet for Infineon BCX56-16E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
