N-channel MOSFET for surface mount applications, featuring an 8V drain-to-source voltage and 25mA continuous drain current. This component operates at frequencies up to 800MHz with a gain of 22dB and a noise figure of 1.6dB. It offers a maximum power dissipation of 200mW and is housed in a compact TO-253-4 (SOT-143) package, measuring 2.9mm in length, 1.3mm in width, and 1mm in height. Designed for lead-free assembly, it supports a gate-to-source voltage of 3V and has an input capacitance of 2.5pF.
Infineon BF1005SE6327 technical specifications.
| Package/Case | TO-253-4 |
| Continuous Drain Current (ID) | 25mA |
| Current Rating | 25mA |
| Drain to Source Voltage (Vdss) | 8V |
| Frequency | 800MHz |
| Gain | 22dB |
| Gate to Source Voltage (Vgs) | 3V |
| Height | 1mm |
| Input Capacitance | 2.5pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.6dB |
| Output Power | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 5V |
| Voltage Rating | 8V |
| DC Rated Voltage | 8V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BF1005SE6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
