
The BF1005SE6327HTSA1 is an N-channel RF transistor from Infineon with a maximum operating frequency of 800MHz and a continuous drain current of 25mA. It has a maximum power dissipation of 200mW and is packaged in a TO-253-4 surface mount package. The transistor operates within a temperature range of -55°C to 150°C and has a noise figure of 1.6dB. It is available in tape and reel packaging.
Infineon BF1005SE6327HTSA1 technical specifications.
| Package/Case | TO-253-4 |
| Continuous Drain Current (ID) | 25mA |
| Frequency | 800MHz |
| Gain | 22dB |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.6dB |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Test Voltage | 5V |
| Voltage Rating | 8V |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon BF1005SE6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
