N-channel MOSFET, surface mount, in a TO-253-4 (SOT-143) package. Features 12V drain-to-source voltage (Vdss) and 25mA continuous drain current (ID). Operates at frequencies up to 800MHz with a gain of 22dB. Offers a low noise figure of 1.4dB and a maximum power dissipation of 200mW. This lead-free, RoHS compliant component is supplied on tape and reel.
Frequency800MHz
PackageTO-253-4
Voltage Rating12V
Current Rating25mA
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Technical Specifications
Infineon BF1009SE6327 technical specifications.
General
| Package/Case | TO-253-4 |
| Continuous Drain Current (ID) | 25mA |
| Current Rating | 25mA |
| Drain to Source Voltage (Vdss) | 12V |
| Frequency | 800MHz |
| Gain | 22dB |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1mm |
| Input Capacitance | 2.5pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.4dB |
| Output Power | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 9V |
| Voltage Rating | 12V |
| DC Rated Voltage | 12V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BF1009SE6327 Datasheet
Download the complete datasheet for Infineon BF1009SE6327 to view detailed technical specifications.
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