N-channel RF MOSFET transistor, single dual gate configuration, designed for automotive applications. Features a 12V maximum drain-source voltage and 0.025A maximum continuous drain current. Operates up to 1000 MHz with a maximum power dissipation of 200mW. Housed in a 4-pin SOT-143 (TO-253AA) surface-mount plastic package with gull-wing leads, measuring 2.9mm x 1.3mm x 1mm. Offers a typical power gain of 22dB and typical input capacitance of 2.1pF at 9V.
PackageSOT-143
MountingSurface Mount
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Technical Specifications
Infineon BF1009SE6327HTSA1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-253-AA |
| Package/Case | SOT-143 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.9|1.7 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-253AA |
| Channel Type | N |
| Configuration | Single Dual Gate |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 12V |
| Maximum Continuous Drain Current | 0.025A |
| Maximum Frequency | 1000MHz |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Power Gain | 22dB |
| Typical Input Capacitance @ Vds | 2.1@9V@Gate 1pF |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BF1009SE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BF1009SE6327HTSA1 to view detailed technical specifications.
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