
Ultra High Frequency RF Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 1-Element, Silicon. Features 800MHz frequency, 23dB gain, and 1.6dB noise figure. Operates with a continuous drain current of 40mA and a drain to source breakdown voltage of 10V. Packaged in a SOT-343, surface mount package with tin contact plating, this RoHS compliant component offers a maximum power dissipation of 200mW.
Infineon BF2040WH6814XTSA1 technical specifications.
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