Ultra High Frequency RF Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 1-Element, Silicon. Features 800MHz frequency, 23dB gain, and 1.6dB noise figure. Operates with a continuous drain current of 40mA and a drain to source breakdown voltage of 10V. Packaged in a SOT-343, surface mount package with tin contact plating, this RoHS compliant component offers a maximum power dissipation of 200mW.
Frequency800MHz
PackageSOT
Voltage Rating8V
Current Rating40mA
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Technical Specifications
Infineon BF2040WH6814XTSA1 technical specifications.
General
Package/Case
SOT
Contact Plating
Tin
Continuous Drain Current (ID)
40mA
Current Rating
40mA
Drain to Source Breakdown Voltage
10V
Drain to Source Voltage (Vdss)
10V
Frequency
800MHz
Gain
23dB
Gate to Source Voltage (Vgs)
7V
Halogen Free
Halogen Free
Height
0.8mm
Input Capacitance
2.9pF
Lead Free
Lead Free
Length
2mm
Max Frequency
1GHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Noise Figure
1.6dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
5V
Voltage Rating
8V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BF2040WH6814XTSA1 Datasheet
Download the complete datasheet for Infineon BF2040WH6814XTSA1 to view detailed technical specifications.
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