The BF5020E6327 is a TO-253-4 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 25mA and a maximum power dissipation of 200mW. The device is rated for a drain to source breakdown voltage of 8V and a gate to source voltage of 6V. It operates at a frequency of 800MHz and has a gain of 26dB. The MOSFET is available in a tape and reel packaging with a quantity of 3000 units.
Frequency800MHz
PackageTO-253-4
Voltage Rating8V
Current Rating25mA
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Technical Specifications
Infineon BF5020E6327 technical specifications.
General
| Package/Case | TO-253-4 |
| Continuous Drain Current (ID) | 25mA |
| Current Rating | 25mA |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Voltage (Vdss) | 8V |
| Frequency | 800MHz |
| Gain | 26dB |
| Gate to Source Voltage (Vgs) | 6V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Noise Figure | 1.2dB |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Test Voltage | 5V |
| Voltage Rating | 8V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BF5020E6327 Datasheet
Download the complete datasheet for Infineon BF5020E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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