The BF517E6327HTSA1 is a surface mount NPN RF transistor with a maximum collector current of 25mA and a maximum power dissipation of 280mW. It has a collector-emitter breakdown voltage of 15V and a maximum operating temperature of 150°C. The transistor is packaged in a TO-236-3 case and is available in tape and reel packaging. It is RoHS compliant and suitable for use in high-frequency applications up to 2.5GHz.
Frequency2.5GHz
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BF517E6327HTSA1 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 2.5GHz |
| Max Collector Current | 25mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 280mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2.5GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BF517E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BF517E6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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