NPN RF small signal bipolar transistor for high-frequency applications, featuring a 7GHz maximum operating frequency and 8GHz transition frequency. This silicon transistor offers a maximum collector current of 80mA and a collector emitter breakdown voltage of 12V. Packaged in a compact SOT-23 surface-mount case with tin, matte plating, it operates across a wide temperature range from -65°C to 150°C. Maximum power dissipation is 580mW, and gain is 15dB.
Frequency8GHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BF771E6327HTSA1 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 15dB |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 80mA |
| Max Frequency | 7GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 580mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 580mW |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BF771E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BF771E6327HTSA1 to view detailed technical specifications.
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