
The BF776E6327 is a surface mount NPN bipolar junction transistor with a maximum collector current of 50mA and a maximum power dissipation of 200mW. It operates over a temperature range of -65°C to 150°C and features a gain of 24dB and a gain bandwidth product of 40GHz. The transistor is packaged in a SOT-343-4 case and is available in quantities of 3000 on tape and reel.
Infineon BF776E6327 technical specifications.
| Package/Case | SOT-343-4 |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Collector-emitter Voltage-Max | 4V |
| Emitter Base Voltage (VEBO) | 1.2V |
| Gain | 24dB |
| Gain Bandwidth Product | 40GHz |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 46GHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BF776E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
