Automotive NPN RF BJT transistor, single configuration, with a maximum collector-emitter voltage of 20V and a maximum DC collector current of 0.035A. Features a minimum DC current gain of 35 at 5mA/10V and a maximum transition frequency of 1100MHz. Housed in a 3-pin SOT-23 (TO-236AA) surface-mount plastic package with gull-wing leads, measuring 2.9mm in length and 1.3mm in width. Operating temperature range is -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BF799E6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AA
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
20V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.035A
Maximum Power Dissipation
280mW
Minimum DC Current Gain
35@5mA@10V|40@20mA@10V
Minimum DC Current Gain Range
30 to 50
Maximum Collector-Emitter Saturation Voltage
0.3@2mA@20mAV
Maximum Base Emitter Saturation Voltage
0.95@2mA@20mAV
Maximum Transition Frequency
1100(Typ)MHz
Maximum Noise Figure
3(Typ)dB
Typical Output Capacitance
0.96pF
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
ECCN
EAR99
Automotive
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BF799E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BF799E6327HTSA1 to view detailed technical specifications.
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