Automotive NPN RF BJT transistor, single configuration, with a maximum collector-emitter voltage of 20V and a maximum DC collector current of 0.035A. Features a minimum DC current gain of 35 at 5mA/10V and a maximum transition frequency of 1100MHz. Housed in a 3-pin SOT-23 (TO-236AA) surface-mount plastic package with gull-wing leads, measuring 2.9mm in length and 1.3mm in width. Operating temperature range is -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BF799E6327HTSA1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-23 |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AA |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.035A |
| Maximum Power Dissipation | 280mW |
| Minimum DC Current Gain | 35@5mA@10V|40@20mA@10V |
| Minimum DC Current Gain Range | 30 to 50 |
| Maximum Collector-Emitter Saturation Voltage | 0.3@2mA@20mAV |
| Maximum Base Emitter Saturation Voltage | 0.95@2mA@20mAV |
| Maximum Transition Frequency | 1100(Typ)MHz |
| Maximum Noise Figure | 3(Typ)dB |
| Typical Output Capacitance | 0.96pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BF799E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BF799E6327HTSA1 to view detailed technical specifications.
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