The BFG135AE6327XT is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 15V and a maximum collector current of 150mA. It has a transition frequency of 6GHz and a maximum power dissipation of 1W. The transistor is packaged in a TO-261-4 case and is available in tape and reel packaging. It operates over a temperature range of -65°C to 150°C.
Frequency6GHz
PackageTO-261-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFG135AE6327XT technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 6GHz |
| Gain | 14dB |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Transition Frequency | 6GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFG135AE6327XT Datasheet
Download the complete datasheet for Infineon BFG135AE6327XT to view detailed technical specifications.
No datasheet is available for this part.