PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter voltage and 0.2A continuous collector current. Offers a maximum power dissipation of 1500mW and operates across a wide temperature range of -65°C to 150°C. Packaged in a SOT-223 (TO-261AA) plastic housing with gull-wing leads, providing a compact 4-pin (3+Tab) configuration. Key DC current gain specifications include 25@1mA, 40@10mA, and 30@30mA.
Infineon BFN39E6327HTSA1 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-223 |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 300V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 300V |
| Maximum DC Collector Current | 0.2A |
| Maximum Power Dissipation | 1500mW |
| Material | Si |
| Minimum DC Current Gain | 25@1mA@10V|40@10mA@10V|30@30mA@10V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Infineon BFN39E6327HTSA1 to view detailed technical specifications.
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