The BFP 420 H6327 is a single dual emitter NPN transistor made from silicon material. It has a maximum collector-emitter voltage of 4.5V and a maximum collector-base voltage of 15V. The maximum emitter-base voltage is 1.5V, and the minimum DC current gain is 60 at 20mA and 4V. The transistor can handle a maximum power dissipation of 210mW. It operates within a temperature range of -65°C to 150°C. The package is a SOT-343 type with 4 pins.
PackageSOT-343
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Technical Specifications
Infineon BFP 420 H6327 technical specifications.
General
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 4.5V |
| Maximum Collector Base Voltage | 15V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.06A |
| Maximum Power Dissipation | 210mW |
| Minimum DC Current Gain | 60@20mA@4V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 25000(Typ)MHz |
| Maximum Noise Figure | 1.1(Typ)dB |
| Typical Output Capacitance | 0.15pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Maximum Power 1dB Compression | 12(Typ)dBm |
| Operational Bias Conditions | 2V/20mA |
| Typical Power Gain | 21dB |
| Maximum 3rd Order Intercept Point | 22(Typ)dBm |
| Pin Count | 4 |
| Package/Case | SOT-343 |
| Package Family Name | SOT-343 |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Infineon BFP 420 H6327 Datasheet
Download the complete datasheet for Infineon BFP 420 H6327 to view detailed technical specifications.
No datasheet is available for this part.