Ultra High Frequency RF Small Signal NPN Bipolar Transistor for surface mount applications. Features an 8GHz transition frequency and 22dB gain, operating with a continuous collector current of 65mA. This silicon transistor offers a maximum collector-emitter voltage of 12V and a power dissipation of 450mW, with an operating temperature range of -65°C to 150°C. Packaged in SOT-343-4, it is RoHS compliant and lead-free.
Frequency8GHz
PackageSOT-343-4
Current Rating65mA
MountingSurface Mount
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Technical Specifications
Infineon BFP183WE6327 technical specifications.
General
| Package/Case | SOT-343-4 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 65mA |
| Current Rating | 65mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 22dB |
| Gain Bandwidth Product | 8GHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 65mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 450mW |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| DC Rated Voltage | 12V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP183WE6327 Datasheet
Download the complete datasheet for Infineon BFP183WE6327 to view detailed technical specifications.
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