NPN RF Bipolar Junction Transistor (BJT) designed for high-frequency applications. Features a 12V collector-emitter breakdown voltage and a maximum collector current of 65mA. Operates up to 8GHz with a transition frequency of 8.5GHz and a gain of 22dB. Packaged in a compact SOT-343-4 surface-mount case, this component offers a power dissipation of 450mW and operates across a wide temperature range from -65°C to 150°C. RoHS compliant with tin-matte contact plating.
Frequency8GHz
PackageSOT-343-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP183WH6327XTSA1 technical specifications.
General
| Package/Case | SOT-343-4 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 22dB |
| Height | 0.8mm |
| Length | 2mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 65mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 450mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8.5GHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP183WH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP183WH6327XTSA1 to view detailed technical specifications.
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