NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 12V collector-emitter breakdown voltage and a maximum collector current of 150mA. This surface mount device operates up to 7.5GHz with a gain of 19dB. It is housed in a SOT-343-4 package, offers a maximum power dissipation of 700mW, and operates within a temperature range of -55°C to 150°C. The component is lead-free and RoHS compliant.
Frequency7.5GHz
PackageSOT-343-4
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Infineon BFP196WE6327 technical specifications.
General
| Package/Case | SOT-343-4 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 150mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 7.5GHz |
| Gain | 19dB |
| Gain Bandwidth Product | 7.5GHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 150mA |
| Max Frequency | 7.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 700mW |
| RoHS Compliant | Yes |
| Transition Frequency | 7.5GHz |
| DC Rated Voltage | 12V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP196WE6327 Datasheet
Download the complete datasheet for Infineon BFP196WE6327 to view detailed technical specifications.
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