
NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 25GHz transition frequency and gain bandwidth product. This surface mount component operates with a maximum collector-emitter voltage of 4.5V and a current rating of 12mA, with a maximum collector current of 25mA. Housed in a compact SOT-343 package, it offers a maximum power dissipation of 75mW and operates across a temperature range of -65°C to 150°C. The transistor is lead-free and RoHS compliant.
Infineon BFP405E6327 technical specifications.
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 5V |
| Collector-emitter Voltage-Max | 4.5V |
| Current Rating | 12mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 25GHz |
| Gain | 23dB |
| Gain Bandwidth Product | 25GHz |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 25mA |
| Max Frequency | 25GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 55mW |
| RoHS Compliant | Yes |
| Transition Frequency | 25GHz |
| DC Rated Voltage | 4.5V |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFP405E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.