NPN bipolar junction transistor designed for RF applications, featuring a 25GHz transition frequency and a 4.5V collector-emitter voltage. This surface-mount device offers a maximum continuous collector current of 12mA and a minimum hFE of 60. Operating across a wide temperature range from -65°C to 150°C, it boasts a 55mW power dissipation and is RoHS compliant.
Frequency25GHz
PackageSMD/SMT
Current Rating12mA
MountingSurface Mount
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Technical Specifications
Infineon BFP405F-E6327 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 5V |
| Collector-emitter Voltage-Max | 4.5V |
| Continuous Collector Current | 12mA |
| Current Rating | 12mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 25GHz |
| Gain | 22.5dB |
| Gain Bandwidth Product | 25GHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 12mA |
| Max Frequency | 25GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 55mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 55mW |
| RoHS Compliant | Yes |
| Transition Frequency | 25GHz |
| DC Rated Voltage | 4.5V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP405F-E6327 Datasheet
Download the complete datasheet for Infineon BFP405F-E6327 to view detailed technical specifications.
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