NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a maximum frequency of 45GHz and a gain bandwidth product of 45GHz. This surface-mount device offers a collector-emitter breakdown voltage of 3.5V and a continuous collector current rating of 40mA. Designed for high-frequency operation, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 100mW.
Frequency45GHz
PackageSMD/SMT
Current Rating40mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BFP520FE6327 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 3.5V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 40mA |
| Current Rating | 40mA |
| Emitter Base Voltage (VEBO) | 1V |
| Frequency | 45GHz |
| Gain | 22.5dB |
| Gain Bandwidth Product | 45GHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 3.5V |
| Max Collector Current | 40mA |
| Max Frequency | 45GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Transition Frequency | 45GHz |
| DC Rated Voltage | 2.5V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP520FE6327 Datasheet
Download the complete datasheet for Infineon BFP520FE6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
