RF NPN Bipolar Junction Transistor (BJT) designed for high-frequency applications. Features a 30GHz transition frequency and gain bandwidth product, with a maximum collector current of 80mA. Operates with a collector-emitter voltage of 4.5V and a collector base voltage of 14V. Housed in a compact SOT-343 surface-mount package, this lead-free component offers a maximum power dissipation of 250mW and operates across a wide temperature range from -65°C to 150°C.
Frequency30GHz
PackageSOT-343
Current Rating80mA
MountingSurface Mount
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Technical Specifications
Infineon BFP540E6327 technical specifications.
General
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 14V |
| Collector Emitter Breakdown Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector-emitter Voltage-Max | 4.5V |
| Continuous Collector Current | 80mA |
| Current Rating | 80mA |
| Emitter Base Voltage (VEBO) | 1V |
| Frequency | 30GHz |
| Gain | 21.5dB |
| Gain Bandwidth Product | 30GHz |
| Height | 0.9mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 80mA |
| Max Frequency | 30GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Transition Frequency | 30GHz |
| DC Rated Voltage | 4.5V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP540E6327 Datasheet
Download the complete datasheet for Infineon BFP540E6327 to view detailed technical specifications.
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