
NPN RF BJT transistor for surface mount applications, featuring a 30GHz operating frequency and 4.5V collector-emitter voltage. Delivers 80mA continuous collector current and 250mW power dissipation. Operates across a -65°C to 150°C temperature range, packaged in SOT-343 with tape and reel. Compliant with RoHS and REACH SVHC standards.
Infineon BFP540H6327XTSA1 technical specifications.
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 14V |
| Collector Emitter Breakdown Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector-emitter Voltage-Max | 4.5V |
| Continuous Collector Current | 80mA |
| Emitter Base Voltage (VEBO) | 1V |
| Frequency | 30GHz |
| Gain | 16dB |
| Height | 0.9mm |
| hFE Min | 50 |
| Length | 2mm |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 80mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 30000 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 30GHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFP540H6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
