NPN Bipolar Junction Transistor (BJT) for RF applications, operating up to 65GHz. Features a 2.3V collector-emitter voltage (VCEO) and 80mA continuous collector current. Housed in a compact TSFP-4 surface-mount package with dimensions of 1.4mm (L) x 0.8mm (W) x 0.55mm (H). Offers a gain of 21dB and a maximum power dissipation of 185mW. This lead-free and RoHS-compliant component is supplied on tape and reel.
Frequency65GHz
PackageSMD/SMT
Current Rating80mA
MountingSurface Mount
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Technical Specifications
Infineon BFP620FE7764 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 7.5V |
| Collector Emitter Breakdown Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 2.3V |
| Collector-emitter Voltage-Max | 2.3V |
| Continuous Collector Current | 80mA |
| Current Rating | 80mA |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 65GHz |
| Gain | 21dB |
| Height | 0.55mm |
| Lead Free | Lead Free |
| Length | 1.4mm |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 80mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 185mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 65000 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 185mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65GHz |
| DC Rated Voltage | 2.3V |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP620FE7764 Datasheet
Download the complete datasheet for Infineon BFP620FE7764 to view detailed technical specifications.
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